features low voltage maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 10 v v ebo emitter-base voltage 6 v i c collector current -continuous 2 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 10 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 6 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =6v,i c =0 0.1 a h fe(1) v ce =1v,i c =0.5a 140 600 dc current gain h fe(2) v ce =1v,i c =2a 70 collector-emitter saturation voltage v ce(sat) i c =2a,i b =50ma 0.5 v base-emitter voltage v be v ce =1v,i c =2a 1.5 v transition frequency f t v ce =1v,i c =0.5a 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 27 pf classification of h fe(1) rank a b c d range 140-240 200-330 300-450 420-600 marking sa sb sc sd sot-89 1. base 2. collector 3. emitter 1 2 3 KTC4377 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu KTC4377
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